Kenneth J. Stein

According to our database, Kenneth J. Stein authored at least 5 papers between 1997 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS.

John J. Pekarik, Vibhor Jain, Crystal Kenney, Judson Holt, Shweta Khokale, Sudesh Saroop, Jeffrey B. Johnson, Kenneth J. Stein, Viorel Ontalus, Christopher Durcan, Mona Nafari, Tayel Nesheiwat, Sangameshwar Saudari, Elahe Yarmoghaddam, Saloni Chaurasia, Alvin J. Joseph

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2003

Product applications and technology directions with SiGe BiCMOS.

Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang

IEEE J. Solid State Circuits, 2003

Foundation of rf CMOS and SiGe BiCMOS technologies.

James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson

IBM J. Res. Dev., 2003

2001

Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs.

Seshadri Subbanna, Lawrence Larson, Greg G. Freeman, David Ahlgren, Kenneth J. Stein, Carl E. Dickey, James Mecke, A. Rincon, P. Bacon, Robert A. Groves, Mehmet Soyuer, David L. Harame, James S. Dunn, David Rowe, W. Chon, Dean A. Herman Jr., Bernard S. Meyerson

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001

1997

Integrated RF components in a SiGe bipolar technology.

Joachim N. Burghartz, Mehmet Soyuer, Keith A. Jenkins, Michael Kies, Margaret Dolan, Kenneth J. Stein, John Malinowski, David L. Harame

IEEE J. Solid State Circuits, 1997