Bernd Tillack

Affiliations:
  • Technical University of Berlin, Germany


According to our database1, Bernd Tillack authored at least 15 papers between 2005 and 2015.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2015
High-performance W-band LNA and SPDT switch in 0.13µm SiGe HBT technology.
Proceedings of the 2015 IEEE Radio and Wireless Symposium, 2015

Monolithic photonic-electronic QPSK receiver for 28Gbaud.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2015

Phase-sensitive optical processing in silicon waveguides.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2015

Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications.
Proceedings of the 6th International Workshop on Advances in Sensors and Interfaces, 2015

Silicon photonics interconnect based on ultra-small scalable components for multi-channel optical transceivers.
Proceedings of the European Conference on Optical Communication, 2015

CMOS-compatible purely capacitive interfaces for high-density in-vivo recording from neural tissue.
Proceedings of the IEEE Biomedical Circuits and Systems Conference, 2015

2014

A CMOS-based sensor array for in-vitro neural tissue interfacing with 4225 recording sites and 1024 stimulation sites.
Proceedings of the IEEE Biomedical Circuits and Systems Conference, 2014

2013
Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process.
Microelectron. Reliab., 2013

2012
Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS.
Microelectron. Reliab., 2012

2011
A 820GHz SiGe chipset for terahertz active imaging applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

SiGe BiCMOS platform - baseline technology for More Than Moore process module integration.
Proceedings of the 14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2011

2010
A 0.13 µm SiGe BiCMOS Technology Featuring f<sub>T</sub>/f<sub>max</sub> of 240/330 GHz and Gate Delays Below 3 ps.
IEEE J. Solid State Circuits, 2010

2009
122 GHz low-noise-amplifier in sige technology.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

2005
A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology.
Proceedings of the 31st European Solid-State Circuits Conference, 2005


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