Bernd Heinemann

Orcid: 0000-0002-6868-1768

According to our database1, Bernd Heinemann authored at least 33 papers between 1981 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2022
Durch Veränderung führen: Warum IT-Projekte ein kommunikatives Change-Management brauchen.
Wirtschaftsinformatik Manag., 2022

A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications.
IEEE J. Solid State Circuits, 2022

2021
A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications.
Proceedings of the 47th ESSCIRC 2021, 2021

2020
3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation.
IEEE J. Solid State Circuits, 2020

2019
Optimization and Performance Limits of a 64-QAM Wireless Communication Link at 220-260 GHz in a SiGe HBT Technology.
Proceedings of the IEEE Radio and Wireless Symposium, 2019

Device Architectures for High-speed SiGe HBTs.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging.
IEEE J. Solid State Circuits, 2018

A 65 Gbps QPSK one meter wireless link operating at a 225-255 GHz tunable carrier in a SiGe HBT technology.
Proceedings of the 2018 IEEE Radio and Wireless Symposium, 2018

A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

SiGe BiCMOS Current Status and Future Trends in Europe.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2017
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap.
Proc. IEEE, 2017

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications.
Proc. IEEE, 2017

Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz.
Proceedings of the 4th ACM International Conference on Nanoscale Computing and Communication, 2017

2016
A 0.55 THz Near-Field Sensor With a µm-Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS.
IEEE J. Solid State Circuits, 2016

25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2014
A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications.
IEEE J. Solid State Circuits, 2014


14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2013
A Terahertz Detector Array in a SiGe HBT Technology.
IEEE J. Solid State Circuits, 2013

2012
SiGe BiCMOS technology for mm-wave systems.
Proceedings of the International SoC Design Conference, 2012

2011
A 820GHz SiGe chipset for terahertz active imaging applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

2010
A Subharmonic Receiver in SiGe Technology for 122 ~ GHz Sensor Applications.
IEEE J. Solid State Circuits, 2010

A 0.13 µm SiGe BiCMOS Technology Featuring f<sub>T</sub>/f<sub>max</sub> of 240/330 GHz and Gate Delays Below 3 ps.
IEEE J. Solid State Circuits, 2010

2009
122 GHz low-noise-amplifier in sige technology.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2009

2006
A 10GS/s 2V<sub>pp</sub> emitter follower only track and hold amplifier in SiGe BiCMOS technology.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2006), 2006

2005
A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology.
Proceedings of the 31st European Solid-State Circuits Conference, 2005

2004
LC-oscillators above 100 GHz in silicon-based technology.
Proceedings of the 33rd European Solid-State Circuits Conference, 2004

2001
Recombination current measurements in the space charge region of MOS field-induced pn junctions.
Microelectron. Reliab., 2001

1999
Methods for generating and editing merged isotropic/anisotropic triangular-element meshes.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1999

Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules.
Proceedings of the IEEE 1999 Custom Integrated Circuits Conference, 1999

1982
Comments on I. Futo, T. Gergely.
Proceedings of the Adequate Modeling of Systems, 1982

1981
Subclasses of Self-Modifying Nets.
Proceedings of the Application and Theory of Petri Nets, 1981


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