Holger Rücker
Orcid: 0000-0001-7407-959X
According to our database1,
Holger Rücker
authored at least 18 papers
between 2009 and 2022.
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Bibliography
2022
A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications.
IEEE J. Solid State Circuits, 2022
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022
2021
A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications.
Proceedings of the 47th ESSCIRC 2021, 2021
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
2020
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020
2019
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
2018
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018
2017
Proc. IEEE, 2017
2014
A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications.
IEEE J. Solid State Circuits, 2014
14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2012
Proceedings of the International SoC Design Conference, 2012
60-GHz voltage-controlled oscillator and frequency divider in 0.25-µm SiGe BiCMOS technology.
Proceedings of the International SoC Design Conference, 2012
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2011
A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector.
IEICE Electron. Express, 2011
2010
A 0.13 µm SiGe BiCMOS Technology Featuring f<sub>T</sub>/f<sub>max</sub> of 240/330 GHz and Gate Delays Below 3 ps.
IEEE J. Solid State Circuits, 2010
IEICE Electron. Express, 2010
2009
Proceedings of the 35th European Solid-State Circuits Conference, 2009