Bingke Zhang

According to our database, Bingke Zhang authored at least 4 papers between 2019 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit.

Moufu Kong, Ning Yu, Yaowen Zhang, Zeyu Cheng, Bingke Zhang, Bo Yi, Hongqiang Yang

Microelectron. J., 2025

A new concept high-k GaN FinFET with integrated SBD breaking the unipolar limit of GaN and realizing excellent reverse recovery performance.

Moufu Kong, Qizhi Feng, Hongfei Deng, Zhaoyu Ai, Mingliang Yang, Ning Yu, Bingke Zhang, Bo Yi, Hongqiang Yang

Microelectron. J., 2025

2023

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance.

Moufu Kong, Ke Huang, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

2019

Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes.

Cong Liu, MouFu Kong, Hanzhi Chen, Bo Yi, Bingke Zhang, Xingbi Chen

Proceedings of the 13th IEEE International Conference on ASIC, 2019