Carmine Abbate

According to our database, Carmine Abbate authored at least 18 papers between 2004 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

Measure of high frequency input impedance to study the instability of power devices in short circuit.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.

Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, Luca Silvestrin, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

2017

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2017

2015

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, Luca Silvestrin, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2015

2014

Turn-off instabilities in large area IGBTs.

Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory

Microelectron. Reliab., 2014

Thermal damage in SiC Schottky diodes induced by SE heavy ions.

Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2014

2013

Thermal instability during short circuit of normally-off AlGaN/GaN HFETs.

Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto

Microelectron. Reliab., 2013

Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2013

2012

Unclamped repetitive stress on 1200 V normally-off SiC JFETs.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo

Microelectron. Reliab., 2012

2011

Operation of SiC normally-off JFET at the edges of its safe operating area.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo

Microelectron. Reliab., 2011

2010

IGBT RBSOA non-destructive testing methods: Analysis and discussion.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo

Microelectron. Reliab., 2010

2009

Instable mechanisms during unclamped operation of high power IGBT modules.

Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro

Microelectron. Reliab., 2009

2008

IGBT modules robustness during turn-off commutation.

Giovanni Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo

Microelectron. Reliab., 2008

2007

The robustness of series-connected high power IGBT modules.

Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo, B. Cascone, Roberta Manzo

Microelectron. Reliab., 2007

2006

Investigation of MOSFET failure in soft-switching conditions.

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate

Microelectron. Reliab., 2006

The high frequency behaviour of high voltage and current IGBT modules.

Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo

Microelectron. Reliab., 2006

2004

Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications.

Giovanni Busatto, Luigi Fratelli, Carmine Abbate, Roberta Manzo, Francesco Iannuzzo

Microelectron. Reliab., 2004