Carole Plossu

According to our database, Carole Plossu authored at least 6 papers between 2004 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

An efficient and simple compact modeling approach for 3-D interconnects with IC's stack global electrical context consideration.

Jean-Etienne Lorival, Françis Calmon, Fengyuan Sun, Felipe Frantz, Carole Plossu, Martine Le Berre, Ian O'Connor, Olivier Valorge, Jean Charbonnier, David Henry, Christian Gontrand

Microelectron. J., 2015

2014

3D substrate modeling; from a first order electrical analysis, towards some possible signal fluctuations consideration, for radio frequency circuits.

Christian Gontrand, Fengyuan Sun, José Ricardo Cárdenas-Valdez, Yue Ma, Carole Plossu, Françis Calmon, José-Cruz Nuñez Perez, Jacques Verdier

Microelectron. J., 2014

2007

Parameters extraction of hafnium based gate oxide capacitors.

T. Nguyen, C. Busseret, Liviu Militaru, A. Poncet, D. Aimé, Nicolas Baboux, Carole Plossu

Microelectron. Reliab., 2007

Peculiarities of electron tunnel injection to the drain of EEPROMs.

Nicolas Baboux, C. Busseret, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2007

2005

Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales.

Nicolas Baboux, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2005

2004

A new structure to monitor electrical transients during programming of EEPROM memory cells.

Nicolas Baboux, Carole Plossu, Philippe Boivin

Microelectron. Reliab., 2004