Chang-Feng Yang

According to our database1, Chang-Feng Yang authored at least 2 papers between 2022 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

Legend:

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In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2024
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm<sup>2</sup> Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2022
Demonstration of High Endurance Capability on Mega-Bit RRAM Macro and Model of ppm Level Failures.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022


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