Yu-Der Chih
According to our database1,
Yu-Der Chih
authored at least 59 papers
between 2011 and 2024.
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Bibliography
2024
Efficient Processing of MLPerf Mobile Workloads Using Digital Compute-In-Memory Macros.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., April, 2024
An 8b-Precision 8-Mb STT-MRAM Near-Memory-Compute Macro Using Weight-Feature and Input-Sparsity Aware Schemes for Energy-Efficient Edge AI Devices.
IEEE J. Solid State Circuits, January, 2024
A Heterogeneous RRAM In-Memory and SRAM Near-Memory SoC for Fused Frame and Event-Based Target Identification and Tracking.
IEEE J. Solid State Circuits, January, 2024
A Nonvolatile AI-Edge Processor With SLC-MLC Hybrid ReRAM Compute-in-Memory Macro Using Current-Voltage-Hybrid Readout Scheme.
IEEE J. Solid State Circuits, January, 2024
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
30.1 A 40nm VLIW Edge Accelerator with 5MB of 0.256pJ/b RRAM and a Localization Solver for Bristle Robot Surveillance.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10<sup>12</sup> Write Endurance and Integrated Margin-Expansion Schemes.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm<sup>2</sup> Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm<sup>2</sup> and 3.78Mb/mm<sup>2</sup> Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices.
IEEE J. Solid State Circuits, 2023
A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 2.38 MCells/mm<sup>2</sup> 9.81 -350 TOPS/W RRAM Compute-in-Memory Macro in 40nm CMOS with Hybrid Offset/IOFF Cancellation and ICELL RBLSL Drop Mitigation.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A 22nm 8Mb STT-MRAM Near-Memory-Computing Macro with 8b-Precision and 46.4-160.1TOPS/W for Edge-AI Devices.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A 73.53TOPS/W 14.74TOPS Heterogeneous RRAM In-Memory and SRAM Near-Memory SoC for Hybrid Frame and Event-Based Target Tracking.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
EMBER: A 100 MHz, 0.86 mm<sup>2</sup>, Multiple-Bits-per-Cell RRAM Macro in 40 nm CMOS with Compact Peripherals and 1.0 pJ/bit Read Circuitry.
Proceedings of the 49th IEEE European Solid State Circuits Conference, 2023
2022
A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding.
IEEE J. Solid State Circuits, 2022
A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection.
IEEE J. Solid State Circuits, 2022
CHIMERA: A 0.92-TOPS, 2.2-TOPS/W Edge AI Accelerator With 2-MByte On-Chip Foundry Resistive RAM for Efficient Training and Inference.
IEEE J. Solid State Circuits, 2022
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device.
IEEE J. Solid State Circuits, 2022
A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A 40nm 64kb 26.56TOPS/W 2.37Mb/mm<sup>2</sup>RRAM Binary/Compute-in-Memory Macro with 4.23x Improvement in Density and >75% Use of Sensing Dynamic Range.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
A 5-nm 254-TOPS/W 221-TOPS/mm<sup>2</sup> Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
A 40nm 60.64TOPS/W ECC-Capable Compute-in-Memory/Digital 2.25MB/768KB RRAM/SRAM System with Embedded Cortex M3 Microprocessor for Edge Recommendation Systems.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
RRAM-DNN: An RRAM and Model-Compression Empowered All-Weights-On-Chip DNN Accelerator.
IEEE J. Solid State Circuits, 2021
A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
An 89TOPS/W and 16.3TOPS/mm<sup>2</sup> All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2021
2020
Proceedings of the IEEE Symposium on VLSI Circuits, 2020
A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time.
IEEE J. Solid State Circuits, 2019
A ReRAM Macro Using Dynamic Trip-Point-Mismatch Sampling Current-Mode Sense Amplifier and Low-DC Voltage-Mode Write-Termination Scheme Against Resistance and Write-Delay Variation.
IEEE J. Solid State Circuits, 2019
A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination.
IEEE J. Solid State Circuits, 2019
2018
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
An N40 256K×44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
Logic Process Compatible 40nm 256K×144 Embedded RRAM with Low Voltage Current Limiter and Ambient Compensation Scheme to Improve the Read Window.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018
2017
11.2 A 1Mb embedded NOR flash memory with 39µW program power for mm-scale high-temperature sensor nodes.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
11.3 A 10nm 32Kb low-voltage logic-compatible anti-fuse one-time-programmable memory with anti-tampering sensing scheme.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
A 1.4Mb 40-nm embedded ReRAM macro with 0.07um<sup>2</sup> bit cell, 2.7mA/100MHz low-power read and hybrid write verify for high endurance application.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017
2015
Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations.
IEEE J. Solid State Circuits, 2015
An Asymmetric-Voltage-Biased Current-Mode Sensing Scheme for Fast-Read Embedded Flash Macros.
IEEE J. Solid State Circuits, 2015
2014
Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme.
IEEE J. Solid State Circuits, 2014
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2013
A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro.
IEEE J. Solid State Circuits, 2013
An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory.
IEEE J. Solid State Circuits, 2013
A 180 MHz direct access read 4.6Mb embedded flash in 90nm technology operating under wide range power supply from 2.1V to 3.6V.
Proceedings of the 2013 International Symposium on VLSI Design, Automation, and Test, 2013
A 55-nm, 0.86-Volt operation, 75MHz high speed, 96uA/MHz low power, wide voltage supply range 2M-bit split-gate embedded Flash.
Proceedings of the 2013 International Symposium on VLSI Design, Automation, and Test, 2013
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013
2012
A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
2011
An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011