Daniel B. Habersat

According to our database1, Daniel B. Habersat authored at least 3 papers between 2018 and 2020.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2020
Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Measurement considerations for evaluating BTI effects in SiC MOSFETs.
Microelectron. Reliab., 2018


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