Aivars J. Lelis

According to our database, Aivars J. Lelis authored at least 7 papers between 2015 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2020

Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification.

Daniel B. Habersat, Aivars J. Lelis, Ronald Green

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation.

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs.

Daniel B. Habersat, Ronald Green, Aivars J. Lelis

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination.

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, Mark A. Anders

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance.

Patrick M. Lenahan, Mark A. Anders, R. J. Waskiewicz, Aivars J. Lelis

Microelectron. Reliab., 2018

Measurement considerations for evaluating BTI effects in SiC MOSFETs.

Daniel B. Habersat, Aivars J. Lelis, Ronald Green

Microelectron. Reliab., 2018

2015

Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC.

Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis

Proceedings of the IEEE International Reliability Physics Symposium, 2015