Saurabh Sirohi

According to our database1, Saurabh Sirohi authored at least 9 papers between 2010 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2023
Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2018
Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2016
Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence.
Proceedings of the 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, 2016

2014
BSIM6 - Benchmarking the Next-Generation MOSFET Model for RF Applications.
Proceedings of the 2014 27th International Conference on VLSI Design, 2014

2010
Modeling of High Frequency Noise in SOI MOSFETs.
Proceedings of the VLSI Design 2010: 23rd International Conference on VLSI Design, 2010

RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications.
Proceedings of the VLSI Design 2010: 23rd International Conference on VLSI Design, 2010


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