Dohui Kim

According to our database, Dohui Kim authored at least 5 papers between 2022 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

CXR-LT 2026 Challenge: Multi-Center Long-Tailed and Zero Shot Chest X-ray Classification.

Hexin Dong, Yi Lin, Pengyu Zhou, Fengnian Zhao, Alan Clint Legasto, Juno Cho, Dohui Kim, Justin Namuk Kim, Mingeon Kim, Sunwoo Kwak, Gabriel Moyà-Alcover, Ky Trung Nguyen, Thanh-Huy Nguyen, Ha-Hieu Pham, Huy-Hieu Pham, Huy Le Pham, Nikhileswara Rao Sulake, Aina Tur-Serrano, Ruichi Zhang, Ang Zu, Adam E. Flanders, Zhiyong Lu, Ronald M. Summers, Mingquan Lin, Hao Chen, Yuzhe Yang, George Shih, Yifan Peng

CoRR, April, 2026

CXR-LT 2026 Challenge: Projection-Aware Multi-Label and Zero-Shot Chest X-Ray Classification.

Juno Cho, Dohui Kim, Mingeon Kim, Hyunseo Jang, Chang Sun Lee, Jong Chul Ye

CoRR, April, 2026

15.3 An 8nm eMRAM for Auto-G1 with a 125MHz Read Speed at 0.6V and 19.94Mb/mm² Density.

Hyunjin Shin, Gyuseong Kang, Yeseul Kim, Dohui Kim, Kyuseong Kim, Sunkyu Lee, Hangil Lee, Sanggyeong Won, Mijoung Kim, Jaeho Lee, Seungpil Ko, Jaechul Shim, Shinhee Han, Kiseok Suh, Sohee Hwang, Hyunchang Lee, Jonghoon Jung, Sanghoon Baek

Proceedings of the IEEE International Solid-State Circuits Conference, 2026

2024

A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm² at 0.60V for Auto-G1 Applications.

Gyuseong Kang, Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh, Sohee Hwang, Daehyun Jang, Sangyeop Baeck, Sei Seung Yoon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2022

A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm² at 0.85V.

Hyunjin Shin, Sangkyung Won, Dohui Kim, Byunghun Choi, Gyusung Kim, Myeonghee Oh, Jaeseung Choi, Jongwook Kye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022