Mijoung Kim

According to our database, Mijoung Kim authored at least 4 papers between 2021 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2026

15.3 An 8nm eMRAM for Auto-G1 with a 125MHz Read Speed at 0.6V and 19.94Mb/mm² Density.

Hyunjin Shin, Gyuseong Kang, Yeseul Kim, Dohui Kim, Kyuseong Kim, Sunkyu Lee, Hangil Lee, Sanggyeong Won, Mijoung Kim, Jaeho Lee, Seungpil Ko, Jaechul Shim, Shinhee Han, Kiseok Suh, Sohee Hwang, Hyunchang Lee, Jonghoon Jung, Sanghoon Baek

Proceedings of the IEEE International Solid-State Circuits Conference, 2026

2024

A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology.

Jeongkyun Kim, Byungho Yook, Youngo Lee, Taemin Choi, Kyuwon Choi, Chanho Lee, Juchang Lee, Hyeongcheol Kim, Seok Yun, Changhoon Do, Minwoo Kwak, Mijoung Kim, Yunrong Li, Hoyoung Tang, Jaeyoung Kim, Inhak Lee, Dongwook Seo, Sangyeop Baeck

IEEE J. Solid State Circuits, April, 2024

2022

4nm Voltage Auto-Tracking SRAM Pulse Generator with Fully RC Optimized Row Auto-Tracking Write Assist Circuits.

Inhak Lee, Dongwook Seo, Yunrong Li, Mijoung Kim, Sangyeop Baeck

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

Soft-Error Susceptibility in Flip-Flop in EUV 7 nm Bulk-FinFET Technology.

Taiki Uemura, Byungjin Chung, Jeongmin Jo, Mijoung Kim, Dalhee Lee, Gunrae Kim, Seungbae Lee, Taesjoong Song, Hwasung Rhee, Brandon Lee, Jaehee Choi

Proceedings of the IEEE International Reliability Physics Symposium, 2021