Farabi Ibne Jamal

According to our database, Farabi Ibne Jamal authored at least 6 papers between 2012 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

A K-Band Complex Permittivity Sensor for Biomedical Applications in 130-nm SiGe BiCMOS.

Vincent Lammert, Carl Heine, Jan Wessel, Farabi Ibne Jamal, Dietmar Kissinger, Angelika Geiselbrechtinger, Vadim Issakov

IEEE Trans. Circuits Syst. II Express Briefs, 2019

2018

A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy.

Rahul Kumar Yadav, Jan Wessel, Mohamed Hussein Eissa, Farabi Ibne Jamal, Maciej Kucharski, Dietmar Kissinger

Proceedings of the IEEE International Symposium on Circuits and Systems, 2018

Contactless Investigation of Dielectric Samples with a High-Q Millimeter-Wave Sensor.

Jan Wessel, Klaus Schmalz, Farabi Ibne Jamal, Dietmar Kissinger

Proceedings of the 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, 2018

2017

A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications.

Farabi Ibne Jamal, Mohamed Hussein Eissa, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger, Jan Wessel

Proceedings of the 2017 IEEE Radio and Wireless Symposium, 2017

A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy.

Rahul Kumar Yadav, Farabi Ibne Jamal, Mohamed Eissa, Jan Wessel, Dietmar Kissinger

Proceedings of the 15th IEEE International New Circuits and Systems Conference, 2017

2012

Digitally-switched resonators for bandpass integrated transmission line ΣΔ modulators.

Ali Zahabi, Farabi Ibne Jamal, Joachim Becker, Muhammad Anis, Maurits Ortmanns

Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012