Mohamed Hussein Eissa

Orcid: 0000-0001-6232-6979

According to our database1, Mohamed Hussein Eissa authored at least 18 papers between 2016 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Vector Modulator Based Leakage Cancellation Technique for CW Radar Transceiver Frontends.
Proceedings of the IEEE Radio and Wireless Symposium, 2023

A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2021
Low-complexity subspace method for I/Q imbalance estimation in low-IF receivers with unknown fading.
Trans. Emerg. Telecommun. Technol., 2021

Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz.
IEEE Access, 2021

OFDM Transmission over a Short-Range 240 GHz Wireless Link: Performance Analysis.
Proceedings of the 25th International ITG Workshop on Smart Antennas, 2021

Vector Modulator Phase Shifters in 130-nm SiGe BiCMOS Technology for 5G Applications.
Proceedings of the IEEE Radio and Wireless Symposium, 2021

A Broadband 110-170 GHz Frequency Multiplier by 4 Chain with 8 dBm Output Power in 130 nm BiCMOS.
Proceedings of the 47th ESSCIRC 2021, 2021

2020
A V-band Bidirectional Amplifier-Module for Hybrid Phased-Array Systems in BiCMOS Technology.
Proceedings of the 2020 IEEE Radio and Wireless Symposium, 2020

Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
Data Link Layer Processor for 100 Gbps Terahertz Wireless Communications in 28 nm CMOS Technology.
IEEE Access, 2019

A 13.5dBm Fully Integrated 200-to-255GHz Power Amplifier with a 4-Way Power Combiner in SiGe: C BiCMOS.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019

Modular Data Link Layer Processing for THz communication.
Proceedings of the 22nd IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2019

2018
D-Band Frequency Quadruplers in BiCMOS Technology.
IEEE J. Solid State Circuits, 2018

Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data Rate.
IEEE J. Solid State Circuits, 2018

Implementation of a Multi-Core Data Link Layer Processor for THz Communication.
Proceedings of the 87th IEEE Vehicular Technology Conference, 2018

A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2018

2017
A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications.
Proceedings of the 2017 IEEE Radio and Wireless Symposium, 2017

2016
A wideband monolithically integrated photonic receiver in 0.25-µm SiGe: C BiCMOS technology.
Proceedings of the ESSCIRC Conference 2016: 42<sup>nd</sup> European Solid-State Circuits Conference, 2016


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