Filippo Giannazzo

According to our database, Filippo Giannazzo authored at least 4 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.

Patrick Fiorenza, Francesco Cordiano, Mario Santo Alessandrino, Alfio Russo, Edoardo Zanetti, Mario Saggio, C. Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability.

Beatrice Carbone, Mario Santo Alessandrino, Alfio Russo, Elisa Vitanza, Filippo Giannazzo, Patrick Fiorenza, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs.

Patrick Fiorenza, Corrado Bongiorno, Angelo Alberto Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects.

Patrick Fiorenza, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Elisa Vitanza, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2021