Patrick Fiorenza

According to our database1, Patrick Fiorenza authored at least 7 papers between 2007 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2007
Defects induced anomalous breakdown kinetics in Pr<sub>2</sub>O<sub>3</sub> by micro- and nano-characterization.
Microelectron. Reliab., 2007


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