Mario Santo Alessandrino

According to our database1, Mario Santo Alessandrino authored at least 5 papers between 2021 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2023
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Failure Analysis of AlGaN/GaN Power HEMTs through an innovative sample preparation approach.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects.
Proceedings of the IEEE International Reliability Physics Symposium, 2021


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