Edoardo Zanetti

According to our database, Edoardo Zanetti authored at least 3 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.

Patrick Fiorenza, Francesco Cordiano, Mario Santo Alessandrino, Alfio Russo, Edoardo Zanetti, Mario Saggio, C. Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC.

Bruna Mazza, Salvatore Patané, Francesco Cordiano, Massimiliano Giliberto, Giovanni Renna, Andrea Severino, Edoardo Zanetti, Massimo Boscaglia, Giovanni Franco

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects.

Patrick Fiorenza, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Elisa Vitanza, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2021