Geok Ing Ng

According to our database, Geok Ing Ng authored at least 7 papers between 2010 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Radio-Frequency GaN-on-Si HEMT Technology for Future Communication Applications (Invited).

Geok Ing Ng, Hanlin Xie, Hanchao Li

Proceedings of the IEEE Region 10 Conference, 2024

An ANN-Physical Hybrid GaN HEMT Model for 5G Power Amplifiers.

Zhongzhiguang Lu, Hanchao Li, Yihao Zhuang, Hanlin Xie, Geok Ing Ng, Yuanjin Zheng

Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2024

2023

A Wideband GaN HEMT Modelling with Comprehensive Hybrid Parameter Extraction for 5G Power Amplifiers.

Zhongzhiguang Lu, Hanlin Xie, Jiaming Piao, Wei Zhengzhe, Geok Ing Ng, Yuanjin Zheng

Proceedings of the IEEE International Symposium on Circuits and Systems, 2023

2019

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency.

Abhinay Sandupatla, Subramaniam Arulkumaran, Kumud Ranjan, Geok Ing Ng, Peter P. Murmu, John Kennedy, Shugo Nitta, Yoshio Honda, Manato Deki, Hiroshi Amano

Sensors, 2019

2016

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation.

Govindo J. Syaranamual, Wardhana A. Sasangka, Riko I. Made, Subramaniam Arulkumaran, Geok Ing Ng, Siew Chuen Foo, Chee Lip Gan, Carl V. Thompson

Microelectron. Reliab., 2016

2012

High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application.

Masayuki Abe, Noriaki Kogushi, Kian Siong Ang, René Hofstetter, Kumar Manoj, Louis Nicholas Retnam, Hong Wang, Geok Ing Ng, Chong Jin, Dimitris Pavlidis

IEICE Trans. Electron., 2012

2010

Accurate large-signal FET model tailored for switching-mode power amplifier design.

Linsheng Liu, Jianguo Ma, Geok Ing Ng

IEICE Electron. Express, 2010