Carl V. Thompson

According to our database1, Carl V. Thompson authored at least 11 papers between 1999 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2018
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab., 2018

2017
Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation.
Microelectron. Reliab., 2017

Characterisation of defects generated during constant current InGaN-on-silicon LED operation.
Microelectron. Reliab., 2017

2016
Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation.
Microelectron. Reliab., 2016

2015
Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2007
Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations.
Microelectron. J., 2007

2005
Electromigration Reliability Comparison of Cu and Al Interconnects.
Proceedings of the 6th International Symposium on Quality of Electronic Design (ISQED 2005), 2005

Thermal aware cell-based full-chip electromigration reliability analysis.
Proceedings of the 15th ACM Great Lakes Symposium on VLSI 2005, 2005

2004
Circuit Level Reliability Analysis of Cu Interconnects.
Proceedings of the 5th International Symposium on Quality of Electronic Design (ISQED 2004), 2004

2002
A Comprehensive Layout Methodology and Layout-Specific Circuit Analyses for Three-Dimensional Integrated Circuits.
Proceedings of the 3rd International Symposium on Quality of Electronic Design, 2002

1999
Methodology for electromigration critical threshold design rule evaluation.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1999


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