Haiqiang Jia

According to our database, Haiqiang Jia authored at least 4 papers between 2022 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2025

Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT.

Fangzhou Wang, Changhong Gao, Guojian Ding, Cheng Yu, Zhuocheng Wang, Xiaohui Wang, Qi Feng, Ping Yu, Peng Zuo, Wanjun Chen, Yang Wang, Haiqiang Jia, Hong Chen, Bo Zhang, Zeheng Wang

Sci. China Inf. Sci., 2025

2024

Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN.

Yangfeng Li, Zian Dong, Shuai Chen, Qin Wang, Tong Li, Shulin Chen, Kun Zheng, Jie Zhang, Guojian Ding, Yang Wang, Haiqiang Jia, Rong Yang, Lei Liao

Sci. China Inf. Sci., 2024

2022

Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure.

Xinxin Li, Zhen Deng, Ziguang Ma, Yang Jiang, Chunhua Du, Haiqiang Jia, Wenxin Wang, Hong Chen

Sensors, 2022

Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the "Green Gap" Range.

Yangfeng Li, Yang Jiang, Haiqiang Jia, Wenxin Wang, Rong Yang, Hong Chen

IEEE Access, 2022