Hamed Mosalam

According to our database, Hamed Mosalam authored at least 10 papers between 2013 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

7.5 A 224Gb/s/wire Single-Ended PAM-4 Transceiver Front-End with 29dB Equalization for 800GbE/1.6TbE.

Xiongshi Luo, Xuewei You, Zhenghao Li, Hamed Mosalam, Dongfan Xu, Taiyang Fan, Hongchang Qiao, Wentao Zhou, Hongzhi Wu, Liping Zhong, Patrick Yin Chiang, Quan Pan

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2022

A 54-68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS.

Hamed Mosalam, Wenbo Xiao, Xiaoyan Gui, Dan Li, Quan Pan

IEEE Trans. Circuits Syst. II Express Briefs, 2022

A 6.15-10.9 Gb/s 0.58 pJ/Bit Reference-Less Half-Rate Clock and Data Recovery With "Phase Reset" Scheme.

Wenbo Xiao, Qiwei Huang, Hamed Mosalam, Chenchang Zhan, Zhiqun Li, Quan Pan

IEEE Trans. Circuits Syst. I Regul. Pap., 2022

2021

A 19-48.3-GHz 6^th-Order Transformer-Based Injection-Locked Frequency Divider With 87.1% Locking Range in 40-nm CMOS.

Junhua Zhu, Qiyao Jiang, Hamed Mosalam, Chenchang Zhan, Quan Pan

IEEE Trans. Circuits Syst. II Express Briefs, 2021

A 57-100 ​GHz 0.13 ​μm SiGe power amplifier with high output power and efficiency.

Hamed Mosalam, Quan Pan

Microelectron. J., 2021

2019

High Efficiency and Small Group Delay Variations 0.18- $\mu$ m CMOS UWB Power Amplifier.

Hamed Mosalam, Ahmed Allam, Hongting Jia, Adel B. Abdel-Rahman, Ramesh K. Pokharel

IEEE Trans. Circuits Syst. II Express Briefs, 2019

A 50 - 90 GHz High Efficiency Fully integrated $0.13 \mu \mathrm{m}$ Si Ge Power Amplifier.

Hamed Mosalam, Mohamed Rizk, Mohamed Kamal, Haytham H. Abdullah

Proceedings of the 31st International Conference on Microelectronics, 2019

2016

A 12 to 24 GHz high efficiency fully integrated 0.18 µm CMOS power amplifier.

Hamed Mosalam, Ahmed Allam, Hongting Jia, Adel B. Abd El-Rahman, Takana Kaho, Ramesh K. Pokharel

IEICE Electron. Express, 2016

A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology.

Hamed Mosalam, Ahmed Allam, Adel B. Abdel-Rahman, Takana Kaho, Hongting Jia, Ramesh K. Pokharel

Proceedings of the IEEE 59th International Midwest Symposium on Circuits and Systems, 2016

2013

A 5-9 GHz CMOS Ultra-wideband power amplifier design using load-pull.

Hamed Mosalam, Ahmed Allam, Hongting Jia, Ramesh K. Pokharel, Mohammed Ragab, Keiji Yoshida

Proceedings of the 20th IEEE International Conference on Electronics, 2013