Hao-Wei Chuang

According to our database, Hao-Wei Chuang authored at least 5 papers between 2012 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2013

Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design.

Hsien-Chin Chiu, Hsiang-Chun Wang, Chao-Wei Lin, Yi-Cheng Luo, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang

Microelectron. Reliab., 2013

Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate.

Hsien-Chin Chiu, Chao-Wei Lin, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau

Microelectron. Reliab., 2013

Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis.

Hsien-Chin Chiu, Chao-Hung Chen, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang

Microelectron. Reliab., 2013

2012

A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate.

Hsien-Chin Chiu, Chao-Wei Lin, Hsuan-Ling Kao, Geng-Yen Lee, Jen-Inn Chyi, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau

Microelectron. Reliab., 2012

High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design.

Chao-Hung Chen, Hsien-Chin Chiu, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau

Microelectron. Reliab., 2012