Feng-Tso Chien

According to our database1, Feng-Tso Chien authored at least 14 papers between 1999 and 2016.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2016
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment.
Microelectron. Reliab., 2016

2014
Device characteristics of AlGaN/GaN MIS-HEMTs with high-k Hf<sub>x</sub>Zr<sub>1</sub><sub>-</sub><sub>x</sub>O<sub>2</sub> (x = 0.66, 0.47, 0.15) insulator layer.
Microelectron. Reliab., 2014

2013
Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design.
Microelectron. Reliab., 2013

Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate.
Microelectron. Reliab., 2013

Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis.
Microelectron. Reliab., 2013

2012
Investigation on the thermal behavior of 0.15 μm gate-length In<sub>0.4</sub>Al<sub>0.6</sub>As/In<sub>0.4</sub>Ga<sub>0.6</sub>As MHEMT.
Microelectron. Reliab., 2012

Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer.
Microelectron. Reliab., 2012

High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design.
Microelectron. Reliab., 2012

2010
Dynamic voltage domain assignment technique for low power performance manageable cell based design.
Proceedings of the 15th Asia South Pacific Design Automation Conference, 2010

Fine resolution double edge clipping with calibration technique for built-in at-speed delay testing.
Proceedings of the 15th Asia South Pacific Design Automation Conference, 2010

2007
A Novel Power MOSFET Structure with Shallow Junction Dual Well Design.
IEICE Trans. Electron., 2007

2006
High Performance Power MOSFETs by Wing-Cell Structure Design.
IEICE Trans. Electron., 2006

2005
High Ruggedness Power MOSFET Design by a Self-Align p<sup>+</sup> Process.
IEICE Trans. Electron., 2005

1999
Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design.
IEEE J. Solid State Circuits, 1999


  Loading...