Hsuan-Ling Kao

Orcid: 0000-0001-9448-9908

According to our database1, Hsuan-Ling Kao authored at least 16 papers between 2009 and 2017.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

Online presence:

On csauthors.net:

Bibliography

2017
Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs.
Microelectron. Reliab., 2017

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors.
Int. J. Circuit Theory Appl., 2017

2016
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment.
Microelectron. Reliab., 2016

2013
Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design.
Microelectron. Reliab., 2013

Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate.
Microelectron. Reliab., 2013

Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis.
Microelectron. Reliab., 2013

Design of an S-band 0.35 µm AlGaN/GaN LNA using cascode topology.
Proceedings of the 16th IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2013

2012
Investigation on the thermal behavior of 0.15 μm gate-length In<sub>0.4</sub>Al<sub>0.6</sub>As/In<sub>0.4</sub>Ga<sub>0.6</sub>As MHEMT.
Microelectron. Reliab., 2012

Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain.
Microelectron. Reliab., 2012

A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate.
Microelectron. Reliab., 2012

A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology.
Proceedings of the IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2012

2011
Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs.
Microelectron. Reliab., 2011

A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology.
Microelectron. Reliab., 2011

A Ka-band triple push coupled pair VCO using 0.18-μm CMOS technology.
Proceedings of the 8th International Conference on Wireless and Optical Communications Networks, 2011

2010
A low phase noise 20 GHz voltage control oscillator using 0.18-μm CMOS technology.
Proceedings of the 13th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems, 2010

2009
0.18 µm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area.
Proceedings of the 2009 IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems, 2009


  Loading...