Hongliang Pu

According to our database, Hongliang Pu authored at least 4 papers between 2020 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Soft Error Study on Advanced Process Node DRAMs at Component and System Level.

Huifang Jiao, Xiaojie Wang, Xiaomeng Qi, Hongliang Pu, Zhiliang Hu

Proceedings of the IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, 2025

2021

A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability Reinforcement.

Kunyang Liu, Xinpeng Chen, Hongliang Pu, Hirofumi Shinohara

IEEE J. Solid State Circuits, 2021

36.3 A Modeling Attack Resilient Strong PUF with Feedback-SPN Structure Having <0.73% Bit Error Rate Through In-Cell Hot-Carrier Injection Burn-In.

Kunyang Liu, Zihan Fu, Gen Li, Hongliang Pu, Zhibo Guan, Xingyu Wang, Xinpeng Chen, Hirofumi Shinohara

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2020

A 0.5-V 2.07-fJ/b 497-F² EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in.

Kunyang Liu, Hongliang Pu, Hirofumi Shinohara

Proceedings of the 2020 IEEE Custom Integrated Circuits Conference, 2020