Hongliang Pu

According to our database, Hongliang Pu authored at least 3 papers between 2020 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability Reinforcement.

Kunyang Liu, Xinpeng Chen, Hongliang Pu, Hirofumi Shinohara

IEEE J. Solid State Circuits, 2021

36.3 A Modeling Attack Resilient Strong PUF with Feedback-SPN Structure Having <0.73% Bit Error Rate Through In-Cell Hot-Carrier Injection Burn-In.

Kunyang Liu, Zihan Fu, Gen Li, Hongliang Pu, Zhibo Guan, Xingyu Wang, Xinpeng Chen, Hirofumi Shinohara

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2020

A 0.5-V 2.07-fJ/b 497-F² EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in.

Kunyang Liu, Hongliang Pu, Hirofumi Shinohara

Proceedings of the 2020 IEEE Custom Integrated Circuits Conference, 2020