Hyeonwoo Park

According to our database, Hyeonwoo Park authored at least 4 papers between 2018 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Monolithic 3D Stackable DRAM Design with BEOL-Compatible Oxide Channel Access Transistor.

Po-Kai Hsu, Sungwon Cho, Janak Sharda, Hyeonwoo Park, Suman Datta, Shimeng Yu

Proceedings of the IEEE International Memory Workshop, 2025

Improving LLM-Based Verilog Code Generation with Data Augmentation and RL.

Kyungjun Min, Seonghyeon Park, Hyeonwoo Park, Jinoh Cho, Seokhyeong Kang

Proceedings of the Design, Automation & Test in Europe Conference, 2025

2024

On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET.

Khandker Akif Aabrar, Hyeonwoo Park, Sharadindu Gopal Kirtania, Eknath Sarkar, Md Abdullah Al Mamun, Sunbin Deng, Chengyang Zhang, Gilbert B. Rayner, Kyeongjae Cho, Suman Datta

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2018

Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation.

Akinobu Teramoto, Keiichi Hashimoto, Tomoyuki Suwa, Jun-ichi Tsuchimoto, Marie Hayashi, Hyeonwoo Park, Shigetoshi Sugawa

Proceedings of the IEEE International Reliability Physics Symposium, 2018