Jean-Lionel Trolet

According to our database, Jean-Lionel Trolet authored at least 5 papers between 2011 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET.

Boubekeur Tala-Ighil, Jean-Lionel Trolet, Hamid Gualous, P. Mary, Stéphane Lefebvre

Microelectron. Reliab., 2015

Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs.

Sébastien Petitdidier, Fanny Berthet, Yannick Guhel, Jean-Lionel Trolet, Philippe Mary, Christophe Gaquière, Bertrand Boudart

Microelectron. Reliab., 2015

2012

Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence.

Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière

Microelectron. Reliab., 2012

2011

Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour.

Boubekeur Tala-Ighil, Amrane Oukaour, Hamid Gualous, Bertrand Boudart, Bertrand Pouderoux, Jean-Lionel Trolet, Marc Piccione

Microelectron. Reliab., 2011

Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy.

Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière

Microelectron. Reliab., 2011