Bertrand Boudart

According to our database, Bertrand Boudart authored at least 14 papers between 2003 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs.

Sébastien Petitdidier, Fanny Berthet, Yannick Guhel, Jean-Lionel Trolet, Philippe Mary, Christophe Gaquière, Bertrand Boudart

Microelectron. Reliab., 2015

2013

Supercapacitors aging diagnosis using least square algorithm.

Amrane Oukaour, Mathieu Pouliquen, Boubekeur Tala-Ighil, Hamid Gualous, Eric Pigeon, Olivier Gehan, Bertrand Boudart

Microelectron. Reliab., 2013

2012

Calendar and cycling ageing of activated carbon supercapacitor for automotive application.

Hamid Gualous, Roland Gallay, Monzer Al Sakka, Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Boudart

Microelectron. Reliab., 2012

Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence.

Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière

Microelectron. Reliab., 2012

2011

Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour.

Boubekeur Tala-Ighil, Amrane Oukaour, Hamid Gualous, Bertrand Boudart, Bertrand Pouderoux, Jean-Lionel Trolet, Marc Piccione

Microelectron. Reliab., 2011

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition.

Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, Stéphane Lefebvre, Bertrand Boudart

Microelectron. Reliab., 2011

Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy.

Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière

Microelectron. Reliab., 2011

2010

Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature.

M. Tounsi, Amrane Oukaour, Boubekeur Tala-Ighil, Hamid Gualous, Bertrand Boudart, Djamil Aïssani

Microelectron. Reliab., 2010

Supercapacitor ageing at constant temperature and constant voltage and thermal shock.

Hamid Gualous, Roland Gallay, G. Alcicek, Boubekeur Tala-Ighil, Amrane Oukaour, Bertrand Boudart, Ph. Makany

Microelectron. Reliab., 2010

2006

Comparative studies of Pt and Ir schottky contacts on undoped Al_0.36Ga_0.64N.

Yannick Guhel, Bertrand Boudart, E. Delos, Marianne Germain, Z. Bougrioua

Microelectron. Reliab., 2006

2005

Trench insulated gate bipolar transistors submitted to high temperature bias stress.

Cheick Oumar Maïga, Hamid Toutah, Boubekeur Tala-Ighil, Bertrand Boudart

Microelectron. Reliab., 2005

2004

Hot carrier aging degradation phenomena in GaN based MESFETs.

Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière, Didier Théron, Bertrand Boudart, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2004

Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress.

Cheick Oumar Maïga, Hamid Toutah, Boubekeur Tala-Ighil, Bertrand Boudart

Microelectron. Reliab., 2004

2003

Degradation in polysilicon thin film transistors related to the quality of the polysilicon material.

Hamid Toutah, Boubekeur Tala-Ighil, Jean-François Llibre, Bertrand Boudart, Taieb Mohammed-Brahim, Olivier Bonnaud

Microelectron. Reliab., 2003