Jiafei Yao

According to our database, Jiafei Yao authored at least 12 papers between 2023 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

A Generalized Design Methodology for Multi-Input Collaborative-Flip Synchronized Switch Harvesting on Capacitors: From Theory to Optimization Strategy.

Jing Wang, Yi Yang, Jun Zhao, Zhen Li, Yixin Zhang, Kemeng Yang, Jiafei Yao, Xiaoyang Zeng, Yufeng Guo

IEEE Trans. Very Large Scale Integr. Syst., June, 2026

High breakdown GaN-on-Si HEMT with a self-modulated substrate voltage.

Kemeng Yang, Haoyu Pan, Lingyun Zhang, Zhibo Fan, Hang Chen, Jing Chen, Jiafei Yao, Jun Zhang, Yufeng Guo

Microelectron. J., 2026

High performance 4H-SiC double-trench super-junction MOSFET with embedded SBD.

Ziwei Hu, Jiafei Yao, Fan Yang, Zijing Yue, Yuxuan Dai, Jing Chen, Kemeng Yang, Man Li, Jun Zhang, Maolin Zhang, Yufeng Guo

Microelectron. J., 2026

Output and transfer characteristics prediction of GaN HEMT via neural-network-based compact model parameters extraction.

Jing Chen, Haiwei Tan, Yuxuan Dai, Man Li, Kemeng Yang, Jiafei Yao, Jun Zhang, Yufeng Guo

Microelectron. J., 2026

2025

Efficient Automatic Design of IGBT Structural Parameters Using Differential Evolution and Machine Learning Model.

Qing Yao, Jing Chen, Kemeng Yang, Jiafei Yao, Jun Zhang, Yuxuan Dai, Weihua Tang, Bo Zhang, Yufeng Guo

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., March, 2025

Self-adaptive body bias tuning technique for enhancing Baliga's figure-of-merit (BFOM) in thin bulk silicon LDMOS.

Man Li, Xinyu Zhang, Kemeng Yang, Jiafei Yao, Jun Zhang, Jing Chen, Yufeng Guo

Microelectron. J., 2025

A novel double-trench SiC SBD-embedded MOSFET with improved figure-of-merit and short-circuit ruggedness.

Ziwei Hu, Jiafei Yao, Fan Yang, Yuxuan Dai, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo

Microelectron. J., 2025

A cross-scale investigation on transient electrothermal performance for power MOSFETs at device-package level.

Yuxuan Dai, Jiafei Yao, Jing Chen, Maolin Zhang, Yucheng Xu, Qing Yao, Qingyou Qian, Jun Zhang, Kemeng Yang, Yufeng Guo

Microelectron. J., 2025

2024

Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric.

Jiafei Yao, Zhengfei Yang, Yeqin Zhu, Qing Yao, Jing Chen, Kemeng Yang, Man Li, Maolin Zhang, Jun Zhang, Yufeng Guo

Microelectron. J., 2024

General neural network-based static performance prediction model construction techniques for gate-all-around and planar field effect transistor.

Jing Chen, Jiahao Wu, Wei Du, Qing Yao, Kemeng Yang, Jun Zhang, Jiafei Yao, Yufeng Guo

Microelectron. J., 2024

Step thickness drift region automatic design of SOI LDMOS using physics-inspired constrained simulated annealing algorithm.

Jing Chen, Jiajun Guo, Qing Yao, Kemeng Yang, Jun Zhang, Jiafei Yao, Yufeng Guo

Microelectron. J., 2024

2023

Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESURF LDMOS.

Yufeng Guo, Kemeng Yang, Jing Chen, Man Li, Zhengfei Jiang, Jiafei Yao, Jun Zhang, Maolin Zhang

Proceedings of the 15th IEEE International Conference on ASIC, 2023