Jiongjiong Mo

According to our database, Jiongjiong Mo authored at least 11 papers between 2013 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

A multiplicator ZCS turn on boost converter with high-efficiency and high-voltage-gain.

Jiongjiong Mo, Haoyu Dai, Zhiyu Wang, Hua Chen, Faxin Yu

IEICE Electron. Express, 2022

2020

A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor.

Tengjia Wang, Min Zhou, Jiarui Liu, Zhiyu Wang, Jiongjiong Mo, Hua Chen, Faxin Yu

IEICE Electron. Express, 2020

2018

Design of a broadband Ka-band MMIC LNA using deep negative feedback loop.

Gang Wang, Wei Chen, Jiarui Liu, Jiongjiong Mo, Hua Chen, Zhiyu Wang, Fa-Xin Yu

IEICE Electron. Express, 2018

2017

A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks.

Bing Hou, Hua Chen, Zhiyu Wang, Jiongjiong Mo, Junli Chen, Fa-Xin Yu, Wenbo Wang

Sensors, 2017

A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs.

Xiuqin Xu, Jiongjiong Mo, Wei Chen, Zhiyu Wang, Yong-Heng Shang, Yang Wang, Qin Zheng, Liping Wang, Zheng-Liang Huang, Fa-Xin Yu

Microelectron. Reliab., 2017

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

Jiongjiong Mo, Hua Chen, Zhiyu Wang, Fa-Xin Yu

J. Sensors, 2017

A New Digital to Analog Converter Based on Low-Offset Bandgap Reference.

Jinpeng Qiu, Tong Liu, Xubin Chen, Yong-Heng Shang, Jiongjiong Mo, Zhiyu Wang, Hua Chen, Jiarui Liu, Jingjing Lv, Fa-Xin Yu

J. Electr. Comput. Eng., 2017

4-20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit.

Wei Chen, Zhiyu Wang, Hua Chen, Zheng-Liang Huang, Jiongjiong Mo

IEICE Electron. Express, 2017

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Jiongjiong Mo, Hua Chen, Liping Wang, Fa-Xin Yu

J. Electron. Test., 2017

2016

A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology.

Dongdi Zhu, Jiongjiong Mo, Shiyi Xu, Yong-Heng Shang, Zhiyu Wang, Zheng-Liang Huang, Fa-Xin Yu

J. Electron. Test., 2016

2013

Characterization of border traps in III-V MOSFETs using an RF transconductance method.

Sofia Johansson, Jiongjiong Mo, Erik Lind

Proceedings of the European Solid-State Device Research Conference, 2013