John Palmour

According to our database1, John Palmour authored at least 7 papers between 1991 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Awards

IEEE Fellow

IEEE Fellow 2013, "For leadership in the development and commercialization of wide-bandgap semiconductor devices".

Timeline

Legend:

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In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited).
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018
Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies.
Microelectron. Reliab., 2018

Reliability studies of SiC vertical power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2002
SiC microwave power technologies.
Proc. IEEE, 2002

1991
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide.
Proc. IEEE, 1991


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