John Palmour

According to our database, John Palmour authored at least 6 papers between 1991 and 2022.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2022

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.

Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2022

DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited).

Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018

Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies.

Donald A. Gajewski, Satyaki Ganguly, Scott T. Sheppard, Simon Wood, Jeff B. Barner, Jim W. Milligan, John Palmour

Microelectron. Reliab., 2018

Reliability studies of SiC vertical power MOSFETs.

Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2002

SiC microwave power technologies.

R. Chris Clarke, John W. Palmour

Proc. IEEE, 2002

1991

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide.

Robert F. Davis, Galina Kelner, Michael S. Shur, John W. Palmour, John A. Edmond

Proc. IEEE, 1991