Donald A. Gajewski

Affiliations:
  • Wolfspeed, Inc., Durham, NC, USA


According to our database1, Donald A. Gajewski authored at least 10 papers between 2014 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
GaN HEMTs Design and Modeling for 5G.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited).
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020
Challenges and Peculiarities in Developing New Standards for SiC.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies.
Microelectron. Reliab., 2018

Reliability studies of SiC vertical power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2014
Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET.
Microelectron. Reliab., 2014


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