Jungwoo Joh

According to our database, Jungwoo Joh authored at least 10 papers between 2009 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs.

Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2019

Current Crowding Impact on Electromigration in Al Interconnects.

Young-Joon Park, Jungwoo Joh, Jayhoon Chung, Srikanth Krishnan

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs.

Ethan S. Lee, Luis Hurtado, Jungwoo Joh, Srikanth Krishnan, Sameer Pendharkar, Jesús A. del Alamo

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2017

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits.

Jungwoo Joh, Yezee Seo, Hoon-Kyu Kim, Taekyoung Kwon

Proceedings of the Information Security Applications - 18th International Conference, 2017

2012

Impact of gate placement on RF power degradation in GaN high electron mobility transistors.

Jungwoo Joh, Jesús A. del Alamo

Microelectron. Reliab., 2012

2011

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors.

Jungwoo Joh, Jesús A. del Alamo, Kurt Langworthy, Sujing Xie, Tsvetanka Zheleva

Microelectron. Reliab., 2011

2010

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors.

Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo

Microelectron. Reliab., 2010

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate.

Sefa Demirtas, Jungwoo Joh, Jesús A. del Alamo

Microelectron. Reliab., 2010

2009

Physics of electrical degradation in GaN high electron mobility transistors.

Jungwoo Joh

PhD thesis, 2009

GaN HEMT reliability.

Jesús A. del Alamo, Jungwoo Joh

Microelectron. Reliab., 2009