Jesús A. del Alamo

According to our database1, Jesús A. del Alamo authored at least 22 papers between 1999 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2022
Neural Network Training With Asymmetric Crosspoint Elements.
Frontiers Artif. Intell., 2022

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019
Analysis and Optimization of Multi-Winding Toroidal Inductors for Use in Multilayered Technologies.
IEEE Access, 2019

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015
Positive-bias temperature instability (PBTI) of GaN MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress.
Microelectron. Reliab., 2014

2013
Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies.
Proceedings of the European Solid-State Device Research Conference, 2013

2012
Impact of gate placement on RF power degradation in GaN high electron mobility transistors.
Microelectron. Reliab., 2012

Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs.
Microelectron. Reliab., 2012

Issues Faced in a Remote Instrumentation Laboratory.
Proceedings of the 2012 IEEE Fourth International Conference on Technology for Education, 2012

2011
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors.
Microelectron. Reliab., 2011

2010
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors.
Microelectron. Reliab., 2010

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate.
Microelectron. Reliab., 2010

Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices.
IEEE J. Solid State Circuits, 2010

Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC.
IEICE Electron. Express, 2010

2009
Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions.
Microelectron. Reliab., 2009

GaN HEMT reliability.
Microelectron. Reliab., 2009

A Versatile Internet-Accessible Electronics Workbench with Troubleshooting Capabilities.
Int. J. Online Eng., 2009

2008
The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories.
Proc. IEEE, 2008

2007
Book "Advances on remote laboratories and e-learning experiences".
Int. J. Online Eng., 2007

1999
Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's.
IEEE J. Solid State Circuits, 1999


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