Junhao Chu

According to our database, Junhao Chu authored at least 8 papers between 2016 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Bulk photovoltaic effect in two-dimensional ferroelectric α-In2Se3.

Huiting Wang, Shuaiqin Wu, Yan Chen, Qianru Zhao, Jinhua Zeng, Ruotong Yin, Yuqing Zheng, Chang Liu, Shukui Zhang, Tie Lin, Hong Shen, Xiangjian Meng, Jun Ge, Xudong Wang, Junhao Chu, Jianlu Wang

Sci. China Inf. Sci., 2025

2023

Associative learning of a three-terminal memristor network for digits recognition.

Yiming Ren, Bobo Tian, Mengge Yan, Guangdi Feng, Bin Gao, Fangyu Yue, Hui Peng, Xiaodong Tang, Qiuxiang Zhu, Junhao Chu, Chungang Duan

Sci. China Inf. Sci., February, 2023

2021

Interface engineering of ferroelectric-gated MoS2 phototransistor.

Shuaiqin Wu, Xudong Wang, Wei Jiang, Luqi Tu, Yan Chen, Jingjing Liu, Tie Lin, Hong Shen, Jun Ge, Weida Hu, Xiangjian Meng, Jianlu Wang, Junhao Chu

Sci. China Inf. Sci., 2021

2020

Resistive Effects on the Spatially Resolved Absolute Electroluminescence of Thin-Film Cu(In, Ga)Se₂ Solar Cells Studied by a Distributed Two-Diode Model.

Xiaobo Hu, Youyang Wang, Yun Jia, Jianyu Hong, Tengfei Chen, Juanjuan Xue, Yuanjing Chen, Jiahua Tao, Guoen Weng, Shaoqiang Chen, Ziqiang Zhu, Junhao Chu

IEEE Access, 2020

2019

Structure-Property Relationships in Graphene-Based Strain and Pressure Sensors for Potential Artificial Intelligence Applications.

Zewei Luo, Xiaotong Hu, Xiyue Tian, Chen Luo, Hejun Xu, Quanling Li, Qianhao Li, Jian Zhang, Fei Qiao, Xing Wu, V. E. Borisenko, Junhao Chu

Sensors, 2019

A study on ionic gated MoS₂ phototransistors.

Binmin Wu, Xudong Wang, Hongwei Tang, Tie Lin, Hong Shen, Weida Hu, Xiangjian Meng, Wenzhong Bao, Jianlu Wang, Junhao Chu

Sci. China Inf. Sci., 2019

A Multidimensional Choledoch Database and Benchmarks for Cholangiocarcinoma Diagnosis.

Qing Zhang, Qingli Li, Guanzhen Yu, Li Sun, Mei Zhou, Junhao Chu

IEEE Access, 2019

2016

Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67-69].

Weiliang Wang, Karim Khan, Xingye Zhang, Haiming Qin, Jun Jiang, Lijing Miao, Kemin Jiang, Pengjun Wang, Mingzhi Dai, Junhao Chu

Microelectron. Reliab., 2016