Koji Eriguchi

According to our database1, Koji Eriguchi authored at least 11 papers between 2001 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2021
Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS).
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2015
Impacts of plasma process-induced damage on MOSFET parameter variability and reliability.
Microelectron. Reliab., 2015

A new prediction method for ReRAM data retention statistics based on 3D filament structures.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Surface orientation dependence of ion bombardment damage during plasma processing.
Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout.
Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014
Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs.
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

A new aspect of plasma-induced physical damage in three-dimensional scaled structures - Sidewall damage by stochastic straggling and sputtering.
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2013
Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency.
Proceedings of 2013 International Conference on IC Design & Technology, 2013

2012
Optimization problems for plasma-induced damage - A concept for plasma-induced damage design.
Proceedings of the IEEE International Conference on IC Design & Technology, 2012

2001
Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics.
Microelectron. Reliab., 2001

Effects of base layer thickness on reliability of CVD Si<sub>3</sub>N<sub>4</sub> stack gate dielectrics.
Microelectron. Reliab., 2001


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