Lansheng Feng

According to our database, Lansheng Feng authored at least 1 paper in 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.

Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao

Sci. China Inf. Sci., February, 2023