Sheng-Lei Zhao

According to our database, Sheng-Lei Zhao authored at least 6 papers between 2014 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

Design and Optimization of Fractional-Turn Transformer With Low Core Loss and Profile.

Wenbao Han, Sheng-Lei Zhao, Longyang Yu, Shouzheng Zhang, Fangzuo Zhao, Haobin Wei, Daoyuan Li, Xuejing Sun, Wei Mu, Zheyuan Yu, Shuzhen You, Yue Hao, Jincheng Zhang

IEEE Trans. Ind. Electron., June, 2026

2025

Symmetrical GaN-Based Vertical Module With Low Interference Integration and High Thermal Performance for PoL Converters.

Longyang Yu, Sheng-Lei Zhao, Xuejing Sun, Wei Mu, Xiufeng Song, Shuzhen You, Yue Hao, Jincheng Zhang

IEEE Trans. Ind. Electron., December, 2025

2023

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.

Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao

Sci. China Inf. Sci., February, 2023

2020

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration.

Kui Dang, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Sheng-Lei Zhao, Yue Hao

IEEE Trans. Ind. Electron., 2020

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs.

Shuang Liu, Xiufeng Song, Jincheng Zhang, Sheng-Lei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao

IEEE Access, 2020

2014

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao

Microelectron. Reliab., 2014