We stand with Ukraine

We stand with Ukraine

Yachao Zhang

Orcid: 0000-0003-1864-6953

Affiliations:

Xidian University, School of Microelectronics, Xi'an, China (PhD 2017)

According to our database¹, Yachao Zhang authored at least 8 papers between 2020 and 2026.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

Legend:

Book In proceedings Article PhD thesis Dataset Other

Links

Online presence:

on orcid.org
on ieeexplore.ieee.org

On csauthors.net:

Bibliography

2026

First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs.

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Zhengxing Zhang

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Sci. China Inf. Sci., 2026

2025

Potential of boron nitride/diamond heterostructures for n- and p-type conduction.

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Sci. China Inf. Sci., 2025

2024

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz.

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Sci. China Inf. Sci., 2024

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability.

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Sci. China Inf. Sci., 2024

2023

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.

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Sci. China Inf. Sci., February, 2023

2020

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration.

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IEEE Trans. Ind. Electron., 2020

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics.

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IEEE Access, 2020

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs.

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IEEE Access, 2020

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