Lei Zhu

Orcid: 0000-0003-2661-7052

Affiliations:

Qiqihar University, Communication and Electronics Engineering Institute, China
Harbin Institute of Technology, China (PhD 2015)

According to our database¹, Lei Zhu authored at least 4 papers between 2017 and 2020.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

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Bibliography

2020

Design and Evaluation of Low-Complexity Radiation Hardened CMOS Latch for Double-Node Upset Tolerance.

[BibT_eX]

[DOI]

IEEE Trans. Circuits Syst. I Regul. Pap., 2020

2019

A CMOS Majority Logic Gate and its Application to One-Step ML Decodable Codes.

[BibT_eX]

[DOI]

IEEE Trans. Very Large Scale Integr. Syst., 2019

2018

Design of Area-Efficient and Highly Reliable RHBD 10T Memory Cell for Aerospace Applications.

[BibT_eX]

[DOI]

IEEE Trans. Very Large Scale Integr. Syst., 2018

2017

Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology.

[BibT_eX]

[DOI]

IEEE Trans. Very Large Scale Integr. Syst., 2017

Lei Zhu

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