M. Hong

According to our database, M. Hong authored at least 2 papers in 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of six.

2019

Fundamental Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High Thermal Stability.

H. W. Wan, Y. J. Hong, L. B. Young, M. Hong, J. Kwo

Proceedings of the IEEE International Reliability Physics Symposium, 2019

BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing.

H. W. Wan, Y. J. Hong, Y. T. Cheng, M. Hong

Proceedings of the IEEE International Reliability Physics Symposium, 2019