Hongyi Dou

According to our database, Hongyi Dou authored at least 1 paper in 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10¹¹, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability.

Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, Xinghang Zhang, Haiyan Wang, Peide D. Ye

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023