Massimo V. Fischetti

According to our database1, Massimo V. Fischetti authored at least 11 papers between 1992 and 2019.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

Homepages:

On csauthors.net:

Bibliography

2019
Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials.
Comput. Phys. Commun., 2019

First-principles Study of the Electron and Hole Mobility in Silicane.
Proceedings of the Device Research Conference, 2019

2018
Modeling of electron transport in nanoribbon devices using Bloch waves.
Proceedings of the 76th Device Research Conference, 2018

2012
Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs.
Microelectron. Reliab., 2012

2006
Silicon CMOS devices beyond scaling.
IBM J. Res. Dev., 2006

Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices.
Proceedings of the Numerical Methods and Applications, 6th International Conference, 2006

2005
Hole transport in p-channel Si MOSFETs.
Microelectron. J., 2005

2001
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies.
Microelectron. Reliab., 2001

1998
Monte Carlo and hydrodynamic simulation of a one dimensional n<sup>+</sup> - n - n<sup>+</sup> silicon diode.
VLSI Design, 1998

Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation.
VLSI Design, 1998

1992
Numerical modeling of advanced semiconductor devices.
IBM J. Res. Dev., 1992


  Loading...