Massimo V. Fischetti
Orcid: 0000-0001-5926-0200Affiliations:
- University of Texas at Dallas, Department of Materials Science and Engineering, Richardson, TX, USA
- University of Massachusetts Amherst, Department of Electrical and Computer Engineering, MA, USA
- IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
According to our database1,
Massimo V. Fischetti
authored at least 11 papers
between 1992 and 2019.
Collaborative distances:
Collaborative distances:
Timeline
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Online presence:
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on orcid.org
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on d-nb.info
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on utdallas.edu
On csauthors.net:
Bibliography
2019
Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials.
Comput. Phys. Commun., 2019
Proceedings of the Device Research Conference, 2019
2018
Proceedings of the 76th Device Research Conference, 2018
2012
Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs.
Microelectron. Reliab., 2012
2006
Proceedings of the Numerical Methods and Applications, 6th International Conference, 2006
2005
2001
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies.
Microelectron. Reliab., 2001
1998
Monte Carlo and hydrodynamic simulation of a one dimensional n<sup>+</sup> - n - n<sup>+</sup> silicon diode.
VLSI Design, 1998
Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation.
VLSI Design, 1998
1992