Antonio Gnudi

Orcid: 0000-0002-2186-3468

Affiliations:
  • University of Bologna, Italy


According to our database1, Antonio Gnudi authored at least 51 papers between 1987 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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Links

Online presence:

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Bibliography

2023
A Threshold Voltage Generator Circuit with Automatic Refresh and Dynamic Updating for Ultra-Low-Power Continuous-Time Comparators.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2023

2022
Phase Change Memories in Smart Sensing Solutions for Structural Health Monitoring.
J. Comput. Civ. Eng., 2022

A 54.8-nW, 256-bit Codeword Temperature-Robust Wake-Up Receiver minimizing False Wake-Ups for Ultra-Low-Power IoT Systems.
Proceedings of the 29th IEEE International Conference on Electronics, Circuits and Systems, 2022

An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021
Compressed Sensing by Phase Change Memories: Coping with Encoder non-Linearities.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021

2020
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector.
IEEE Trans. Circuits Syst. I Regul. Pap., 2020

Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers.
Proceedings of the 2020 International Conference on Embedded Wireless Systems and Networks, 2020

2019
TCAD predictions of hot-electron injection in p-type LDMOS transistors.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

On the electron mobility of strained InGaAs channel MOSFETs.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018
TCAD investigation on hot-electron injection in new-generation technologies.
Microelectron. Reliab., 2018

TCAD study of DLC coatings for large-area high-power diodes.
Microelectron. Reliab., 2018

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture.
Microelectron. Reliab., 2018

Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures.
Proceedings of the 25th IEEE International Conference on Electronics, Circuits and Systems, 2018

3D TCAD modeling of NO2CNT FET sensors.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

Performance study of strained III-V materials for ultra-thin body transistor applications.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Theoretical analyses and modeling for nanoelectronics.
Proceedings of the 45th European Solid State Device Research Conference, 2015

2014
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions.
Proceedings of the 44th European Solid State Device Research Conference, 2014

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation.
Proceedings of the 44th European Solid State Device Research Conference, 2014

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2013
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs.
Microelectron. J., 2013

Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited).
Proceedings of the European Solid-State Device Research Conference, 2013

Gate stack optimization to minimize power consumption in super-lattice fets.
Proceedings of the European Solid-State Device Research Conference, 2013

DC and small-signal numerical simulation of graphene base transistor for terahertz operation.
Proceedings of the European Solid-State Device Research Conference, 2013

Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty.
Proceedings of the European Solid-State Device Research Conference, 2013

Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform.
Proceedings of the European Solid-State Device Research Conference, 2013

2012
TCAD degradation modeling for LDMOS transistors.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Drain-conductance optimization in nanowire TFETs.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011
Automatic Compensation of the Voltage Attenuation in 3-D Interconnection Based on Capacitive Coupling.
IEEE J. Solid State Circuits, 2011

On the simulation of fast settling charge pump PLLs up to fourth order.
Int. J. Circuit Theory Appl., 2011

2010
Quadrature VCOs based on direct second harmonic locking: Theoretical analysis and experimental validation.
Int. J. Circuit Theory Appl., 2010

2009
3D capacitive transmission of analog signals with automatic compensation of the voltage attenuation.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard.
Proceedings of the Design, Automation and Test in Europe, 2009

2008
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches
CoRR, 2008

A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package
CoRR, 2008

2007
RF<i>I/Q</i> Downconverter With Gain/Phase Calibration.
IEEE Trans. Circuits Syst. II Express Briefs, 2007

Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems
CoRR, 2007

2005
A 0.83-2.5-GHz continuously tunable quadrature VCO.
IEEE J. Solid State Circuits, 2005

A gain/phase mismatch calibration procedure for RF I/Q downconverters.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2005), 2005

2004
Quadrature VCO based on direct second harmonic locking.
Proceedings of the 2004 International Symposium on Circuits and Systems, 2004

A design flow for inductively degenerated LNAs.
Proceedings of the 2004 11th IEEE International Conference on Electronics, 2004

1998
Transient Analysis of Silicon Devices Using the Hydrodynamic Model.
VLSI Design, 1998

1994
Hydrodynamic simulation of semiconductor devices operating at low temperature.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1994

1993
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993

1992
Numerical modeling of advanced semiconductor devices.
IBM J. Res. Dev., 1992

1990
Investigation of non-local transport phenomena in small semiconductor devices.
Eur. Trans. Telecommun., 1990

1989
Adaptive mesh generation preserving the quality of the initial grid.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1989

1988
A new discretization strategy of the semiconductor equations comprising momentum and energy balance.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1988

1987
Sensitivity Analysis for Device Design.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1987


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