Michael L. Alles

Affiliations:

Vanderbilt University, Nashville, TN, USA

According to our database¹, Michael L. Alles authored at least 8 papers between 2008 and 2021.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

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PhD thesis

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Bibliography

2021

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2019

Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015

Multi-cell soft errors at the 16-nm FinFET technology node.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Total-ionizing-dose effects and reliability of carbon nanotube FET devices.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

2012

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

2011

The sensitivity of radiation-induced leakage to STI topology and sidewall doping.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

2008

Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices.

[BibT_eX]

[DOI]

Alexander I. Fedoseyev

Marek Turowski

Michael L. Alles

Robert A. Weller

Math. Comput. Simul., 2008

Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices.

[BibT_eX]

[DOI]

Alexander I. Fedoseyev

Proceedings of the Computational Science, 2008

Michael L. Alles

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