Ronald D. Schrimpf

Orcid: 0000-0001-7419-2701

Affiliations:
  • Vanderbilt University, Nashville, TN, USA


According to our database1, Ronald D. Schrimpf authored at least 20 papers between 2001 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2000, "For contributions to the understanding and the modeling of physical mechanisms governing the response of semiconductor devices to radiation exposure.".

Timeline

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Links

Online presence:

On csauthors.net:

Bibliography

2023
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate.
Proceedings of the Device Research Conference, 2023

2021
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.
Proceedings of the 14th IEEE International Conference on ASIC, 2021

2018
A TCAD evaluation of a single Bulk-BICS with integrative memory cell.
Microelectron. J., 2018

2015
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Total-ionizing-dose effects and reliability of carbon nanotube FET devices.
Microelectron. Reliab., 2014

Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs.
Microelectron. Reliab., 2014

2013
An efficient technique to select logic nodes for single event transient pulse-width reduction.
Microelectron. Reliab., 2013

2012
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.
Microelectron. Reliab., 2012

2011
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH<sub>3</sub>-rich conditions.
Microelectron. Reliab., 2011

The sensitivity of radiation-induced leakage to STI topology and sidewall doping.
Microelectron. Reliab., 2011

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.
Microelectron. Reliab., 2011

2009
Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

2008
Total ionizing dose effects in shallow trench isolation oxides.
Microelectron. Reliab., 2008

2007
Hydrogen in MOSFETs - A primary agent of reliability issues.
Microelectron. Reliab., 2007

Effects of device aging on microelectronics radiation response and reliability.
Microelectron. Reliab., 2007

2006
Single event burnout in power diodes: Mechanisms and models.
Microelectron. Reliab., 2006

2005
Single event transient effects in a voltage reference.
Microelectron. Reliab., 2005

2001
A generalized model for the lifetime of microelectronic components, applied to storage conditions.
Microelectron. Reliab., 2001

Thermal modeling of single event burnout failure in semiconductor power devices.
Microelectron. Reliab., 2001


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