Bharat L. Bhuva

According to our database1, Bharat L. Bhuva authored at least 34 papers between 1989 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Single-Event Latchup Vulnerability at the 7-nm FinFET Node.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Frequency, LET, and Supply Voltage Dependence of Logic Soft Errors at the 7-nm Node.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Effects of Temperature and Supply Voltage on Soft Errors for 7-nm Bulk FinFET Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
High-Current State triggered by Operating-Frequency Change.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Thermal Neutron Induced Soft Errors in 7-nm Bulk FinFET Node.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Temperature Dependence of Single-Event Transient Pulse Widths for 7-nm Bulk FinFET Technology.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Single-Event Upset Responses of Dual- and Triple-Well D Flip-Flop Designs in 7-nm Bulk FinFET Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Neutron Beam Attenuation Through Semiconductor Devices During SEU Testing.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Soft Error Performance of High-Speed Pulsed-DICE-Latch Design in 16 nm and 7 nm FinFET Processes.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Alpha Particle Soft-Error Rates for D-FF Designs in 16-Nm and 7-Nm Bulk FinFET Technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
A TCAD evaluation of a single Bulk-BICS with integrative memory cell.
Microelectron. J., 2018

Evaluation on flip-flop physical unclonable functions in a 14/16-nm bulk FinFET technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Single-event effects on optical transceiver.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Designing soft-error-aware circuits with power and speed optimization.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Impact of supply voltage and particle LET on the soft error rate of logic circuits.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016
Single-event performance of differential flip-flop designs and hardening implication.
Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016

2015
Multi-cell soft errors at the 16-nm FinFET technology node.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Terrestrial SER characterization for nanoscale technologies: A comparative study.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Single-Event Transient Measurements on a DC/DC Pulse Width Modulator Using Heavy Ion, Proton, and Pulsed Laser.
J. Electron. Test., 2014

2013
An efficient technique to select logic nodes for single event transient pulse-width reduction.
Microelectron. Reliab., 2013

A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients.
J. Electron. Test., 2013

2012
Performance, Metastability, and Soft-Error Robustness Trade-offs for Flip-Flops in 40 nm CMOS.
IEEE Trans. Circuits Syst. I Regul. Pap., 2012

Single-Event Effects Analysis of a Pulse Width Modulator IC in a DC/DC Converter.
J. Electron. Test., 2012

2011
Impact of Synthesis Constraints on Error Propagation Probability of Digital Circuits.
Proceedings of the 2011 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, 2011

Performance, metastability and soft-error robustness tradeoffs for flip-flops in 40nm CMOS.
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011

2008
Design Technique for Mitigation of Soft Errors in Differential Switched-Capacitor Circuits.
IEEE Trans. Circuits Syst. II Express Briefs, 2008

1993
Statistical degradation analysis of digital CMOS IC's.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993

1992
Multi-level qualitative reasoning applied to CMOS digital circuits.
Artif. Intell. Eng., 1992

1989
Switch-level simulation of total dose effects on CMOS VLSI circuits.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1989


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